Abstract

This paper discusses a method to evaluate anomalous skin effect. Anomalous skin effect (ASE) is a phenomenon which appears when the skin depth becomes comparable to the mean free path of electrons. In anomalous region, the effective resistivity depends on skin depth. Thus it is difficult to evaluate by field-solvers. The proposed method realizes field simulation considering ASE by gradient resistivity. Simulation result shows that the resistance increase more rapid than classical skin effect above 100GHz. The effect on the resistance is 5% at 100GHz and 10% at 300GHz.

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