Abstract
For the type-II GaAsSb/InAs/AlSb W-shaped quantum well (QW)-heterostructure having total width ~ 20 nm, the optical gain characteristics have been investigated under high pressure oriented in (100), (001) and (110) directions. The range of pressure applied was kept for 1 GPa to 3 Gpa. The outcomes of the work done have been summarized in terms of gradient of the optical gain with uni-axial and bi-axial pressures applied on the GaAsSb/InAs/AlSb QW heterostructure. In results, it is found that for uni-axial x-direction (100) and bi-axial (110) pressure, the optical gain gradient is positive, while that for uni-axial z-direction (001) the gradient of the optical gain is negative. Thus, in conclusion, the x-directional (100) and bi-axial directional (110) pressure significantly enhances the gain. The results are novel and claim the usage of such heterostructure as light source with high optical gain.
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