Graded silicon-germanium channel tunnel field effect transistor (G-TFET), an approach to increase I&lt;inf&gt;ON&lt;/inf&gt; without compromising I&lt;inf&gt;OFF&lt;/inf&gt;

Nitin Goyal,Poornendu Chaturvedi

doi:10.1109/isdrs.2011.6135196

Graded silicon-germanium channel tunnel field effect transistor (G-TFET), an approach to increase I<inf>ON</inf> without compromising I<inf>OFF</inf>

Nitin Goyal, Poornendu Chaturvedi

https://doi.org/10.1109/isdrs.2011.6135196

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Publication Date: Dec 1, 2011

Citations: 5

Affiliation: Solid State Physics Laboratory, University Graduate Center, Norwegian University of Science and Technology

#Channel Tunnel Field Effect Transistor #Double Gate Tunneling Field Effect + Show 8 more

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Abstract

In this paper, a new modified thin body double gate tunneling field effect transistor (G-TFET) on SOI with graded silicon germanium channel is proposed. Gradually changing Ge composition is used to achieve (i) reduced band gap, (ii) reduced barrier width, and (iii) enhanced accelerating intrinsic field, which enhances device performance parameters. Results show G-TFET with graded SiGe channel can be successfully employed for achieving significant increase in ON current without compromising OFF current.

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