Abstract
A newly developed gate/n/sup -/ overlapped LDD MOSFET was investigated. The MOSFET was fabricated by an oblique rotating ion implantation technique. A formula for the impurity ion profile was derived to analyze the lowering of substrate current and improvement of the degradation caused by the hot-carrier effect of the MOSFET. It was proved that the impurity ion profile near the drain edge is remarkably graded in the directions along channel and toward substrate even just after the implantation, so that the maximum lateral electric field is relaxed as compared with conventional LDD MOSFETs. Also, the maximum point of the lateral electric field at the drain edge is located apart from the main path of the channel current.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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