Abstract
A new graded-gap p-Al 0.2Ga 0.8As–p-Al x Ga 1− x As–n-GaAs detector structure with internal optical response was developed and investigated as a detector for high-energy electron beam dosimetry. An additional p-Al 0.2Ga 0.8As top layer was grown on the narrow-gap side of the structure. This thin (2 μm) top layer significantly reduces nonradiative surface recombination and increases detector sensitivity for high-energy electron beams by about 10–13%. The increase in doping level of the graded-gap Al x Ga 1− x As layer from p=3×10 17 to 1.9×10 18 cm −3 increases detector sensitivity by about 2.3 times. The detector was encapsulated into a plastic body and fitted for dosimetric measurements in a water phantom. Linear response on absorbed dose and dose rate was obtained for beams with electron energies of 6, 12 and 20 MeV. A good agreement of relative depth dose distribution measured by the Al x Ga 1− x As detector and ionization chamber is obtained for the 6 MeV energy electron beam, but a discernible discrepancy is observed for the higher electron energies.
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