Abstract
In this work, we investigate the bipolar gain and collected charge under heavy ion irradiation in graded-channel junctionless dual-gate MOSFETs. The transient response of the graded-channel device is compared with that of the conventional uniform-channel device. We present the different doping levels on the channel around the source and show that the bipolar gain and collected charge of the graded-channel device are lower than those of the uniform-channel device, owing to the lower doping level around the source in the channel, which induces lower floating body effects. We consider the effect of changing the doping level in a graded-channel device.
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