G-r noise spectra of semiconductors and insulators with various trap distributions

Abstract

We examine spectra of semiconductors and insulators with Gaussian and exponential energy distributions of traps. In both cases the noise spectra strongly resemble the g-r noise of a single trap level that can communicate with either the conduction or the valence band. It is noted here that in semiconductors the number of carriers is larger than the number of traps, while in insulators the opposite is true