Goufo-Caputo fractional viscoelastic photothermal model of an unbounded semiconductor material with a cylindrical cavity

Abstract

In order to describe the photothermal dynamic behavior of viscoelastic semiconductor materials, the authors of this work propose a fractional modification of the Kelvin-Voigt type. The generalized Mittag-Leffler function method with two parameters was utilized as the non-local, nonsingular kernel of the Goufo-Caputo fractional operator, which is similar to the AB fractional derivative. Also, a new concept of photovoltaic heat transfer has been developed to describe the process of photothermal heating in semiconductors, in which light energy is converted into thermal energy by absorption. This unique model is grounded in the theoretical framework of the Moore-Gibson-Thompson (MGT) equation, and it offers additional insights into the underlying process of light sensitive heat transfer, as well as the intricate interaction between heating signals, elasticity, and plasma. As a direct application of the proposed model, the photothermal interactions that occur when an infinitely rotating semiconductor material with a cylindrical hole is subjected to a laser thermal flux and immersed in a constant axial magnetic field have been investigated. These findings may have implications for developing optically absorbent nanostructures and their use in photothermal energy generation. For this reason, the comparison of modified photoelasticity models with spherical derivatives and classical models applied to semiconducting materials seems interesting.