Abstract
We report highly selective etching rates between a Ni‐Cr mask and and layers as well as highly anisotropic profiles in these materials at a nanometer scale using the Ni‐Cr mask and chemical assisted ion beam etching. The etching rates of Ni‐Cr, , and depend on gas flux, ion beam energy, and ion beam current density. Selectivities of the order of 40:1 and 8:1 between , respectively, and , were obtained at an ion beam energy of 500 eV, beam current density of 0.2 mA/cm2, and a flow of 4.2 ml/min.
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