Abstract
Heat treatment of silicon, both p‐type and n‐type, to temperatures in excess of 900°C frequently results in a decrease of lifetime and is sometimes accompanied by an increase in resistivity. In the present experiments, gold has been found to be introduced during such heat treatments in concentrations sufficient to account for the observed changes in the electrical characteristics. Gold has been observed on the surfaces of all the silicon samples examined so far. Heat treatments in the temperature range 1100°–1300°C result in a concentration of gold in the bulk material of about 1014 at./cm3. A film of nickel or copper on the silicon surface during the heat treatment has a gettering action for gold. Heat treatment in vacuum can also be effective in the removal of gold.
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