Gold growth on Si(111) √3 × √3 Ag and √3 × √3 Au surfaces

Abstract

Epitaxial growth of gold on Si(111) √3 × √3 Ag and √3 × √3 Au surfaces is investigated by reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES). A stable RHEED oscillation is observed during the epitaxial growth of Au(111) on both surfaces at room temperature after 2 monolayer (ML) deposition (1 ML = 1.39 × 10 15 atoms/ cm 2). Before the oscillation, at about 0.5 ML, a diffuse RHEED pattern due to formation of a disordered structure appears for both surfaces. During RHEED oscillations, gold silicide segregates on the grown surfaces. The roles of the disordered structure formation and the silicide segregation in the layered epitaxial growth are discussed.