Abstract
We report growth by molecular beam epitaxy and structural characterization ofgallium-nucleated GaAs nanowires on silicon. The influences of growth temperature andV/III ratio are investigated and compared in the case of oxide-covered and oxide-free substrates.We demonstrate a precise positioning process for Ga-nucleated GaAs nanowires using ahole array in a dielectric layer thermally grown on silicon. Crystal quality is analyzed byhigh resolution transmission electron microscopy. Crystal structure evolves from purezinc blende to pure wurtzite along a single nanowire, with a transition region.
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