Abstract
The chemical vapor deposition (CVD) of gold using trifluorophosphine gold(I) chloride, a simple and volatile inorganic precursor, is presented. Both solid precursor and its toluene solutions were used as starting materials. With the solid precursor placed in a simple bubbler, adhesive and continuous gold thin films were grown on substrates with a growth rate of only . However, with a liquid delivery system using 2.5% precursor solution in toluene with a volume rate of , a growth rate of was achieved. Both and were used as carrier gas, but only in the case of were compact and highly pure thick gold films grown on at deposition temperature as low as . The dependence of the deposition process and characteristics of gold deposited films, such as morphology, microstructure, and chemical composition, on deposition temperature and the nature of the carrier gas ( or ) was also investigated.
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