GO induces ZIF-8 to produce hollow nanobox CoSe2@ZnSe/rGO for high-performance supercapacitors

Abstract

Reasonable use of graphene oxide (GO) conductive network structure can enhance the charge storage and transfer of electrode materials. In this paper, the deposition of ZIF-8 on the surface of graphene oxide (GO) was induced by Cokendall effect and selenization, and the unique matching method of Co2+ and ZIF-8 was used to obtain CoSe2@ZnSe/rGO electrode materials with reduced graphene oxide (rGO) as the growth substrate. The capacity of a three-electrode test with a current density of 1.0 A g−1 is as high as 2075.43 F g−1, and the capacity retention rate is 83.09 % after the circulation of 10,000 times. The assembled asymmetric supercapacitor GCZS-2//AC has a high power density of 1279.95 W kg−1 at an energy density of 85.33 Wh kg. The improvement of electrochemical properties benefits from the unique structure structure of the unique hollow nano box skeleton. In addition, DFT theoretical calculations show that CoSe2@ZnSe grown on rGO has stronger charge mobility and conductivity. This work provides a strategy for fabricating electrode materials with unique structures using rGO as a growth template.