Abstract
Recent advances in the glow discharge optical spectroscopy (GDOS) technique have been made, as shown by measurements of implanted arsenic profiles in silicon. The improvements discussed include the use of krypton as a discharge gas, a dual detection system which permits simultaneous measurements of the impurity distribution and the substrate sputtering, and the use of nickel as an overcoat to allow accurate measurements near the surface. Profiles of as-implanted and 1000°C annealed samples are presented which agree substantially with other types of measurements.
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