Abstract
The vapour pressure controlled Czochralski (VCZ) method belongs to the new methods to provide low-gradient temperature fields during the growth of III–V crystals. For the first time a global two-dimensional model of the VCZ growth of 3″ and 4″ GaAs crystals is presented. The finite volume code CrysVUN++ was used to simulate heat transfer taking into account conduction and radiation in the whole equipment. Thermoelastic stresses are analysed in terms of the von-Mises stress. There is a good agreement between measured and calculated values, e.g., of the convexity of the crystal-melt interface.
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