Global temperature field simulation of the vapour pressure controlled Czochralski (VCZ) growth of 3″–4″ gallium arsenide crystals

Abstract

The vapour pressure controlled Czochralski (VCZ) method belongs to the new methods to provide low-gradient temperature fields during the growth of III–V crystals. For the first time a global two-dimensional model of the VCZ growth of 3″ and 4″ GaAs crystals is presented. The finite volume code CrysVUN++ was used to simulate heat transfer taking into account conduction and radiation in the whole equipment. Thermoelastic stresses are analysed in terms of the von-Mises stress. There is a good agreement between measured and calculated values, e.g., of the convexity of the crystal-melt interface.