Abstract
To simulate global radiation and conduction heat transfer in an industrial encapsulated Czochralski (LEC) crystal growth furnace, a finite element (ABAQUS) program was used. Further improvement of the predicted temperature field was achieved by replacing the conduction solution in the melt with a solution including melt convection produced by a finite volume (STAR-CD) program. Approach verification was done by comparison with a model experiment containing a graphite dummy “crystal” and gallium melt as a prototype to the real GaAs crystal growth process.
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