Abstract
The observed diffusion profiles obtained by the simultaneous diffusion of Ga and As from GaAs sources with temperatures of 1040, 1100 and 1140°C into n-type Si at 1250°C are reported. The distribution of the As concentration will be explained by a diffusion coefficient depending on concentration and for the source temperatures 1100 and 1140°C by the formation of As precipitations at As concentrations higher than 10 20 cm -3. The electric field between the Ga acceptors and the more slowly diffusing As donators causes the effective Ga diffusion coefficient to be smaller than that with undisturbed Ga diffusion.
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