Abstract
A GaAs/GaAlAs/GaAs/GaAlAs heterostructure has been prepared on a GaAs susbtrate, bonded to 7056 Corning glass, and the substrate and first AlGaAs removed chemically, utilizing the differential etching characteristics of GaAs and AlGaAs in NH4OH−H2O2 and HF solutions. The resulting structure of GaAs/AlGaAs/glass has excellent layer morphology, uniform thickness, and good transmission photocathode performance.
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