Abstract

CMOS-MEMS integration is getting a more and more important topic with growing expectations and requirements on the function and performance of micro sensors [1]. The integration of ASICs and memories to MEMS sensor structures allows by calibration the compensation of side effects (temperature influences, stress influences,…) and manufacturing tolerances. Thus, very accurate sensors, at acceptable cost structures for high volume applications become feasible. These high volume applications are often for mobile devices or other use cases where the form factor is important as well – here the wafer level integration and the wafer level packaging (wafer bonding) also offer many opportunities.

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