Abstract
Several samples of semiconductors (InSb and InSbTe) and alloys (FeBC, FeNiPBC and AlSi) were irradiated by a high-power CW CO 2 laser and pulsed YAG laser beams. The surface morphology of the samples was examined by a scanning electron-microscope (SEM). The reflection electron diffraction patterns were recorded by using a transmission electron microscope (TEM). The critical cooling rate for glass formation of different samples has been determined. Characteristics of the glass formation process are discussed.
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