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Abstract
Grazing incidence X-ray scattering (GIXS) and Auger electron spectroscopy (AES) have been used for characterizing thin polycrystalline titanium and titanium oxide films sputtered on silicon wafers. The critical angle in X-ray reflection curves indicates that the density of sputtered TiOx/Si is higher than the titanium bulk value. The values of thickness of these thin films estimated from a comparison with calculated reflection curves were in good agreement with those obtained by a surface thickness profiler. Diffraction patterns in both GIXS and Seemann-Bohlin geometries show that Ti/Si and TiOx/Si, which are identified as Ti and Ti2O3, respectively, are oriented to the c-axis. The compositional homogeneity through the films of Ti/Si and TiOx/Si has been recognized by the AES depth profiles.
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