Abstract
Lateral strain modulations in a Si substratearising from laterally patterned periodic SiO2 stripes wereinvestigated by x-ray grazing incidence diffraction. In thisdiffraction geometry a depth dependent in-plane strain analysiswas performed. Using finite element calculations the displacementfield in the non-patterned Si substrate was calculated, whichserved as an input for the simulation of the diffractedintensities based on the distorted-wave Born approximation.By varying the lattice mismatch between the SiO2 stripes and theSi substrate, a good agreement between simulations and experimental diffraction data could be achieved.
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