Giant Wavelength–Temperature Dependence of a Micro Machined Vertical Cavity Surface Emitting Laser with a Thermally Actuated Cantilever Structure

Abstract

We present the modeling and the experimental result of a micro machined vertical cavity surface emitting laser with a thermally actuated semiconductor/SiO2 cantilever structure. The modeling result shows a giant wavelength–temperature dependence of over 3.5 nm/K. The fabricated device exhibits a temperature dependence of 0.79 nm/K, which is 10 times larger than that of conventional vertical cavity surface emitting lasers (VCSELs).