Abstract
One of the most exciting properties of two dimensional materials is their sensitivity to external tuning of the electronic properties, for example via electric field or strain. Recently discovered analogues of phosphorene, group-IV monochalcogenides (MX with M = Ge, Sn and X = S, Se, Te), display several interesting phenomena intimately related to the in-plane strain, such as giant piezoelectricity and multiferroicity, which combine ferroelastic and ferroelectric properties. Here, using calculations from first principles, we reveal for the first time giant intrinsic spin Hall conductivities (SHC) in these materials. In particular, we show that the SHC resonances can be easily tuned by combination of strain and doping and, in some cases, strain can be used to induce semiconductor to metal transition that makes a giant spin Hall effect possible even in absence of doping. Our results indicate a new route for the design of highly tunable spintronics devices based on two-dimensional materials.
Highlights
The spin Hall effect (SHE) is a phenomenon emerging from spin–orbit coupling (SOC) in which an electric current or external electric field can induce a transverse spin current resulting in spin accumulation at opposite sample boundaries [1,2,3,4]
We demonstrate that compressive or tensile strain along any axis can tune the position of the spin Hall conductivities (SHC) resonances, but can induce semiconductor to metal transitions that make a giant spin Hall effect possible even in absence of doping
In order to facilitate a systematic analysis, we have introduced the labels E1 and E2 corresponding to the two SHC resonances below and above EF, and we followed their behavior due to the electronic structure changes induced by the strain
Summary
Jagoda Sławińska , Frank T Cerasoli, Haihang Wang , Sara Postorino, Andrew Supka, Stefano Curtarolo4,5 , Marco Fornari and Marco Buongiorno Nardelli.
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