Abstract
The results of high-field terahertz transmission experiments on n-doped silicon (carrier concentration of 8.7×1016 cm-3) are presented. We use terahertz pulses with electric field strengths up to 3.1 MV cm-1 and a pulse duration of 700fs. A huge transmittance enhancement of ∼90 times is observed with increasing of the terahertz electric field strengths within the range of 1.5-3.1 MV cm-1.
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