Abstract
An on-chip approach for fabricating ferromagnetic/semiconductor–nanotip heterojunctions isdemonstrated. The high-density array of Si nanotips (SiNTs) is employed as a template for depositingLa0.7Sr0.3MnO3 (LSMO) rods with a pulsed-laser deposition method. Compared with the planar LSMO/Si thinfilm, the heterojunction shows a large enhancement of room temperature magnetoresistance (MR) ratio up to 20% under 0.5 T and a bias current of20 µA. TheMR ratio is found to be tunable, which increases with increasing external biasand the aspect ratios of the nanotips. Electric-field-induced metallization, inconjunction with nanotip geometry, is proposed to be the origin for the giantMR ratio.
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