Abstract
Spin valve multilayers exhibiting enhanced giant magnetoresistive (GMR) effect and weak interlayer coupling as well as strong exchange biasing were fabricated by a two-step deposition procedure. The down sublayers (i.e., buffer layer Ta/free layer NiFe/interlayer Cu) were deposited at a lower argon pressure, then the upper sublayers (i.e., pinned layer NiFe/pinning layer FeMn/cover layer Ta) were deposited at a higher argon pressure. The former promoted formation of the strong (111) textures, smooth interfaces, and dense Cu film, resulting in a weak interlayer coupling. The latter promoted small domains and less diffusive interfaces, resulting in a strong exchange biasing and an enhanced GMR ratio. This shows that independent control of magnetoresistance, interlayer coupling, and exchange biasing is possible.
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