Abstract
Magnetotransport properties of Hg 1− x Cr x Se and Hg 1− x Eu x Te crystals grown by a modified Bridgman method have been studied. Structural characterization of the Hg 1− x Cr x Se crystals showed good homogeneity for compositions x<0.05, while samples with higher chromium content included macroscopic needle-like inclusions. It has been found that the inner part of each inclusion is amorphous CrSe and the boundary regions are ternary HgCr 2Se 4. Depending on the magnetic field direction different kinds of the temperature dependence of the magnetoresistance Δ R/ R have been found. At room temperature the value of Δ R/ R can reach 100% for the Hg 1− x Eu x Te crystal. This makes the studied semimagnetic semiconductors an attractive magnetoresistive material for magnetic field sensors.
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