Giant Increase of Electron Saturated Drift Velocity in a MODFET Channel

V G Mokerov,V Juciene,J Pozela,K Pozela

doi:10.1007/978-3-540-36588-4_55

Giant Increase of Electron Saturated Drift Velocity in a MODFET Channel

V G Mokerov, V Juciene + Show 2 more

https://doi.org/10.1007/978-3-540-36588-4_55

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Publication Date: Jan 1, 2006

Citations: 3

#Electron Saturated Drift Velocity #Quantum Dots + Show 8 more

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Abstract

The tenfold increase in electron saturated drift velocity at high electric fields in the AlGaAs/GaAs MODFET channel with InAs inserted layers containing quantum dots (QDs) in a GaAs quantum well is observed. The maximal drift velocity exceeding 108 cm/s is obtained. The maximal current density and transconductance of the MODFET with QDs increasing up to 35 A/cm and 103 mS/mm, respectively, are observed.

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