Abstract
We have studied the temperature dependent phonon emission rate P(T) of a strongly interacting (rs⩾22) dilute 2D metallic GaAs hole system through carrier heating experiment. We observe that P(T) changes from P(T) ∼ T5 to P(T) ∼ T7 above 100mK, indicating a crossover from screened piezoelectric(PZ) coupling to screened deformation potential(DP) coupling for hole‐phonon scattering. Quantitative comparison with theory shows that the short range DP coupling between the low density holes and phonons is more than ten times stronger than expected in the poorly understood 2D metallic state (E. Abrahams, S.V. Kravchenko, and M.P. Sarachik, Rev. Mod. Phys. 73, 251(2001)). The long range PZ coupling between holes and phonons, however, has an expected magnitude.
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