Abstract
A series of Fe45.51(Al2O3)54.49 nano-granular films were prepared using ion-beam sputtering technique. A saturated hall resistivity of about 12.5 μΩ·cm at room temperature was observed. The transmission electron microscopy image showed that very small Fe particles of smaller than 1 nm are embedded in Al2O3 matrix, and connected into network. The measured ρ - T curve indicated that this giant Hall effect may originate from the percolation phenomenon. With different annealing temperature (TA) up to 300°C, the saturated Hall resistivity decreased only a little. The good thermal stability of Fe45.51(Al2O3)54.49 nano-granular Films showed potential application for magnetic sensor.
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