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Abstract
In this study, crystalline cobalt ferrite thin films with large Faraday rotation (FR) coefficient were deposited on silicon by radiofrequency magnetron sputtering. An (100)-oriented MgO buffer layer was employed to solve the film/substrate discrepancy. A giant FR coefficient of 25 600 deg cm−1 was achieved for a cobalt ferrite film deposited at a substrate temperature (ST) of 600 °C. Moreover, the magnetic easy axis of the films switched from in-plane (IP) to out-of-plane orientation with increasing ST. This switching in the easy axis could be attributed to induced IP stress in the films with high deposition temperatures.
Published Version
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