Abstract
The integration of nanoparticles (NPs) into functional materials is a powerful tool for the smart engineering of their physical properties. If properly designed and optimized, NPs possess unique optical, electrical, quantum, and other effects that will improve the efficiency of optoelectronic devices. Here, we propose a novel approach for the enhancement of perovskite light-emitting diodes (PeLEDs) based on electronic band structure deformation by core-shell NPs forming a metal-oxide-semiconductor (MOS) structure with an Au core and SiO shell located in the perovskite layer. The presence of the MOS interface enables favorable charge distribution in the active layer through the formation of hole transporting channels. For the PeLED design, we consider integration of the core-shell NPs in the realistic numerical model. Using our verified model, we show that, compared with the bare structure, the incorporation of NPs increases the radiative recombination rate of PeLED by several orders of magnitude. It is intended that this study will open new perspectives for further efficiency enhancement of perovskite-based optoelectronic devices with NPs.
Highlights
Received: 6 December 2020Accepted: 23 December 2020Published: 27 December 2020Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations.license.In recent years, halide perovskites have attracted considerable attention from research groups worldwide due to properties [1,2,3,4,5] such as reconfigurable optical bandgap, high quantum yield of photoluminescence, large carrier mobility and lifetime, low-cost fabrication, high absorption coefficient, color purity and tunability
We consider the integration of a core-shell NP with around the metal (Au) core and SiO2 shell inside the active layer of perovskite light-emitting diodes (PeLEDs)
SiO2 as a dielectric material creates the barrier for carriers around the metal (Au), and there is a bending of the conduction and the valence bands
Summary
Halide perovskites have attracted considerable attention from research groups worldwide due to properties [1,2,3,4,5] such as reconfigurable optical bandgap, high quantum yield of photoluminescence, large carrier mobility and lifetime, low-cost fabrication, high absorption coefficient, color purity and tunability. These remarkable properties make them superior candidates for various photonic, photovoltaic, and optoelectronic applications [6,7,8]. This device performs well, both in photovoltaic and electroluminescent operation modes expanding possible applications [12,13,14,15]
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