Abstract
The I-V characteristics of graphene nanoribbon (GNR) p-n junctions have been investigated using atomistic quantum simulation. On the basis of results obtained for simple armchair GNR structures with large bandgap, it is suggested to improve significantly the device operation by inserting a small-bandgap section in the transition region between n and p zones. A giant peak-to-valley ratio (PVR) of negative differential conductance (higher than 103) can be achieved in such hetero-junctions. Additionally, the PVR is proved to be weakly sensitive to the transition length and not strongly degraded by the edge disorder, which is an important feature regarding applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
