Abstract
A study is reported on the low-temperature (T≤30 K) photoluminescence in the spatially indirect exciton line in GaAs/Al0.33Ga0.67As double quantum wells as a function of optical pump power and applied electric field. We have revealed a giant (threefold) burst of luminescence intensity in a part of the spectral profile of the indirect-exciton line occurring at certain values of the external electric field, temperature, and optical pumping. We have also observed that this part of the indirect-exciton line profile varies in intensity (fluctuates) with time with a characteristic period of tens of seconds. The results obtained are discussed within a model of the Bose-Einstein condensation of a system of two-dimensional bosons that have, besides the free, a discrete energy spectrum lying below the bottom of the free-state band.
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