Abstract

We report on the strengths and limitations of scanning tunnelling microscopy (STM) when used for characterising atomic-scale features of quasi two-dimensional materials, such as graphene and single layers of hexagonal boron nitride, which may present strong corrugations when grown epitaxially on a substrate with a lattice mismatch. As a paradigmatic test case, we choose single-layer and bilayer graphene on Ru(0001), because their STM images show both a long-range moiré modulation and complex atomic-scale distortions of the graphene lattice. Through high-resolution STM measurements, we first determine with high accuracy the moiré epitaxial relations of the single layer and the bilayer with respect to the metal substrate. In particular, we also provide direct evidence for the existence of AA-stacked bilayer graphene domains on Ru(0001). We then demonstrate that the local strain distribution, as inferred from the same STM images, can be affected by large errors, so that apparent giant strains arise in some regions of the moiré as an imaging artefact. With the aid of density functional theory simulations, we track down the origin of these fictitious distortions in the high directionality of the graphene π-orbital density combined with the large corrugation of the sample. The proposed theoretical model correctly accounts for the observed dependence of the apparent strain on the STM tip–sample separation and on the different degree of curvature of the second graphene layer with respect to the single layer.

Highlights

  • After the rise of graphene [1], many other atomically thin materials have been proposed and fabricated [2] in view of their great potential, both as a fundamental physics playground and as a new technological platform

  • We briefly describe two systems for which apparent giant distortions of the sp2-bond network can be spotted by eye from high-resolution scanning tunnelling microscopy (STM) images: graphene on Ru(0001) and h-BN on Rh(111), both shown in figure 1

  • We show through density functional theory (DFT) simulations of the graphene/Ru(0001) system how the electronic structure properties of the corrugated graphene affects the STM images and we propose a simple theoretical model that accounts for the main features of the imaging artefact

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Summary

18 October 2016

Any further distribution of Keywords: graphene, hexagonal boron-nitride, scanning tunneling microscopy, moir patterns, Ru(0001), Rh(111). We report on the strengths and limitations of scanning tunnelling microscopy (STM) when used for characterising atomic-scale features of quasi two-dimensional materials, such as graphene and single layers of hexagonal boron nitride, which may present strong corrugations when grown epitaxially on a substrate with a lattice mismatch. As a paradigmatic test case, we choose single-layer and bilayer graphene on Ru(0001), because their STM images show both a long-range moiré modulation and complex atomic-scale distortions of the graphene lattice. Through high-resolution STM measurements, we first determine with high accuracy the moiré epitaxial relations of the single layer and the bilayer with respect to the metal substrate. The proposed theoretical model correctly accounts for the observed dependence of the apparent strain on the STM tip–sample separation and on the different degree of curvature of the second graphene layer with respect to the single layer

Introduction
Quantifying the STM apparent graphene strain
DFT modelling of the apparent graphene strain
Findings
Conclusion

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