Abstract
We demonstrate a method for spin dependent recombination (SDR) in metal-oxide-semiconductor-field-effect-transistors which (i) greatly amplifies the spin dependent fraction of the investigated transistor current and (ii) concentrates the sensitivity of the measurement exclusively to the most technologically relevant defects, those at the semiconductor/oxide interface. We demonstrate a gain in sensitivity well in excess of an order of magnitude and a much better resolved spectrum. The boost in sensitivity reduces data acquisition time by orders of magnitude and significantly enhances the analytical power of SDR. The very large amplification effect may also be of interest for magnetic resonance controlled spintronic transistors.
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