Abstract
GexSi1—x strain layer superlattice structure have attracted world wide attention since last few years and have opened up new possibilities and promises in the area of solid state electronics based on silicon technology. The literature on this subject has been grown very rapidly and several reviews have been written on specified aspects of the field. In this paper a more complete review emphasising the applied aspects along with basic physics is presented. In this review article the structure of pseudomorphic layers and their transport and optical properties have been discussed. Also an update of the new optical and electronic devices based on SiGe strain layers has been made and their relative advantages and disadvantages are critically discussed.
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