Abstract
AbstractWe have studied iron gettering in intentionally iron contaminated Czochralski silicon wafers with a polysilicon layer. We have compared the gettering effect of the poly‐layer with internal gettering during a slow cooling from a high temperature. The experimental results show that the gettering efficiency of the polysilicon layer is stronger than internal gettering by bulk micro defects. In addition, the results reveal that after iron contamination and following surface cleaning, the polysilicon layer remains as a significant contamination source compared to a bare silicon surface. We also suggest a model for polysilicon gettering, which we use to analyze the dominant gettering mechanism under various gettering conditions (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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