Abstract
Gettering of Fe impurities by bulk stacking faults in Czochralski-grown silicon are investigated by means of the electron-beam-induced-current technique and transmission electron microscopy. It is found that Fe impurities only precipitate on Frank partial dislocations bounding stacking faults when the specimen is cooled slowly; however, both Frank partials and fault planes are decorated by Fe impurities when the specimen is cooled rapidly. It is explained that small oxygen precipitates on fault planes serve as the gettering centers for Fe impurities in the fast cooled specimen.
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