Abstract
Metallic contamination on silicon surfaces has a detrimental impact on ULSI device performance and yield. Surface metal impurities degrade gate oxide integrity, while metal impurities dissolved in silicon provide recombination centers, resulting in junction leakage. Surface metal impurities penetrate silicon by the collision with dopant during ion implantation and are also diffused in silicon by subsequent annealing [. If metal impurities are present around junctions, they can cause junction leakage. In order to avoid the junction leakage, metal impurities must be away from junction. It was reported that iron can be gettered in the region of dopants implanted at high energy [. On the other hand, little work has been reported on the behavior of metal impurities in shallow junction. In this study, the gettering behavior of various transition metals in low-energy and high-dose ion-implanted silicon has been demonstrated.
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