Abstract
A porous silicon layer as a getter of uncontrolled impurities has been prepared by implantation of Sb+ into silicon and subsequent thermal treatments. The lifetime of nonequilibrium charge carriers in n- and p-type silicon wafers with a getter layer is 3–4 times longer than that without a getter.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.