Abstract
In this paper, GeTe and Sb4Te layers were alternately deposited to form superlattice-like structure (SLL) for multilevel phase change memory (PCM). It is shown that SLL GeTe/Sb4Te film can realize a multilevel storage with various appropriate thickness ratios between GeTe and Sb4Te layers. The crystallization behavior of SLL GeTe/Sb4Te film can be tuned by the thickness ratios which is associated closely with the thermal stability. GeTe(4 nm)/Sb4Te(6 nm)-based device demonstrated the minimum voltage pulse for the RESET operation of 3.2 V-5 ns, suggesting the low power consumption in comparison with that of Ge2Sb2Te5 (4.1 V). An electric pulse as short as 5 ns can trigger different operations among three stable resistance states for GeTe(4 nm)/Sb4Te(6 nm)-based device, which can be explained by the asynchronous crystallization of GeTe and Sb4Te. These results demonstrate that SLL GeTe/Sb4Te films are promising candidate for multilevel phase-change memory.
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