Abstract
We report the fabrication and experimental investigation of Ge-Si x Ge 1-x core-shell nanowire (NW) tunneling field effect transistors (TFETs). Low energy ion implantation was used to highly dope the NW TFET source (S) and drain (D). The NW TFETs show ON-state currents of up to I ON ∼ 5 µA/µm, and the ambipolar behavior is suppressed by achieving asymmetric doping concentrations at S/D. Furthermore, the NW TFET subthreshold slope (SS) shows little temperature dependence down to 77K, consistent with band-to-band tunneling (BTBT) being the dominant carrier injection mechanism.
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