Abstract
We report the world's first demonstration of Germanium-Tin (Ge 1−x Sn x ) heterojunction phototransistor (HPT) for high-efficient low-power light detection in short-wave infrared (SWIR) range. Large optical response enhancement of ∼10 times over the conventional p-i-n Ge 1−x Sn x photodiode (PD) was achieved, with photodetection beyond 2003 nm. High responsivities of ∼2.6 A/W at 1510 nm and ∼0.19 A/W at 1877 nm were achieved at a low operating bias of 1.0 V.
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