Abstract
SiC schottky diodes take advantage of the material's superior reverse breakdown voltage when compared to Silicon (Si) [1]. However, when considered for MOSFET applications, the high concentration of interface traps at the SiC/SiO2 interface reduce the material's already low channel mobility [2]. Therefore, a Ge/SiC heterojunction solution becomes an attractive prospect, whereby the Ge forms the control region after being epitaxially grown on the SiC. With a well established Ge-High K dielectric technology [3], a carbon-free oxide would exist, leaving a channel-region with a mobility approximately four times that of SiC.
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