Abstract
Germanium‐silicon heterojunctions have been prepared by an alloy process. By controlling the impurity concentrations, abrupt junctions having widths from 6000Aå to as low as 80Aå have been realized. Forward and reverse bias characteristics of several typical heteroj unctions are presented. No Esaki effect was observed for thin heterojunctions (<100Aå). This is attributed to masking by an abnormally high excess current. This excess current is a tunneling current via defect states caused by the large dislocation densities present in the junction.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
