Germanium Photodiode Arrays on Silicon-On-Insulator With On-Chip Bias Circuit

Abstract

Foundry-enabled Ge-on-Si waveguide (WG) photodiodes (PDs) with on-chip bias circuit are demonstrated. While a single-element PD has a 52-GHz bandwidth (BW) and a radio frequency (RF) saturation power of -11 dBm at 40 GHz, PD arrays composed of 2 and 4 PDs have RF saturation powers of -6.7 dBm at 40 GHz and -2.3 dBm at 27 GHz, respectively. The bias circuits are analyzed.