Abstract
Different technologies for the fabrication of Germanium photodetectors were developed. Germanium was grown by RPCVD in a silicon cavity in order to provide a direct coupling with a rib silicon waveguide. With direct deposition of Ti/TiN/AlCu on Ge, Metal-Schotkky-Metal (MSM) diodes were formed. PIN photodiode were fabricated either with in-situ doping during RP- CVD epitaxy of Ge, either by ion implantation. For vertical PIN photodiode, the germanium was successfully etched either in mesa either anisotropically with Cl2 gazes. Small footprint Ge photodiodes can lead to high speed operation on CMOS
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